NTD4969N-1G Details _NTD4969N-1G Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,313(Ref. price)

Qty.	Unit Price	Ext. Price
1	$0.18050	$0.18050

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	30 V
Current - Continuous Drain (Id) @ 25°C	9.4A (Ta), 41A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	9mOhm @ 30A, 10V
Vgs(th) (Max) @ Id	2.5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	9 nC @ 4.5 V
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	837 pF @ 15 V
FET Feature	-
Power Dissipation (Max)	-
Operating Temperature	-
Mounting Type	Through Hole
Supplier Device Package	I-PAK
Package / Case	TO-251-3 Short Leads, IPak, TO-251AA

Other

Price advantage, NTD4969N-1G is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
SIHP16N50C-BE3	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET N-CH 500V 16A TO220AB	$6.05880	In Stock:2552
DMT3009LFVW-7	Diodes Incorporated	MOSFETs - Single	Datasheet	MOSFET N-CH 30V 12A PWRDI3333	$0.23001	In Stock:18434
IXFN24N90Q	IXYS	MOSFETs - Single	Datasheet	MOSFET N-CH 900V 24A SOT-227B	No price	In Stock:18440
BUK7C2R2-60EJ	NXP USA Inc.	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 200A D2PAK-7	No price	In Stock:18442
IRF9510L	Vishay Siliconix	MOSFETs - Single	Datasheet	MOSFET P-CH 100V 4A I2PAK	No price	In Stock:18446