TK62J60W,S1VQ Details _TK62J60W,S1VQ Related parameters PDF_Toshiba Semiconductor and Storage-IC-STK

MOSFETs - Single

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Specifications

Description	Details
Series	DTMOSIV
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	61.8A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	38mOhm @ 30.9A, 10V
Vgs(th) (Max) @ Id	3.7V @ 3.1mA
Gate Charge (Qg) (Max) @ Vgs	180 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	6500 pF @ 300 V
FET Feature	Super Junction
Power Dissipation (Max)	400W (Tc)
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-3P(N)
Package / Case	TO-3P-3, SC-65-3

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