RS1L120GNTB Details _RS1L120GNTB Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	12A (Ta), 36A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	12.7mOhm @ 12A, 10V
Vgs(th) (Max) @ Id	2.7V @ 200µA
Gate Charge (Qg) (Max) @ Vgs	26 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	1330 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	3W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	8-HSOP
Package / Case	8-PowerTDFN

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