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SI2334DS-T1-GE3 Picture

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SI2334DS-T1-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 30V 4.9A SOT23-3
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In Stock:20,024(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
30 V
Current - Continuous Drain (Id) @ 25°C
4.9A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
2.5V, 4.5V
Rds On (Max) @ Id, Vgs
44mOhm @ 4.2A, 4.5V
Vgs(th) (Max) @ Id
1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
10 nC @ 4.5 V
Vgs (Max)
±8V
Input Capacitance (Ciss) (Max) @ Vds
634 pF @ 15 V
FET Feature
-
Power Dissipation (Max)
1.3W (Ta), 1.7W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
SOT-23-3 (TO-236)
Package / Case
TO-236-3, SC-59, SOT-23-3
Other
Price advantage, SI2334DS-T1-GE3 is available in stock and can be delivered on the same day
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