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SIHU5N50D-GE3 Picture

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SIHU5N50D-GE3

  • Vishay Siliconix
  • New
  • MOSFET N-CH 500V 5.3A TO251
  • Datasheet download
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In Stock:4,290(Ref. price)
Qty.Unit PriceExt. Price
1
$1.05730
$1.05730
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
500 V
Current - Continuous Drain (Id) @ 25°C
5.3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
10V
Rds On (Max) @ Id, Vgs
1.5Ohm @ 2.5A, 10V
Vgs(th) (Max) @ Id
5V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
20 nC @ 10 V
Vgs (Max)
±30V
Input Capacitance (Ciss) (Max) @ Vds
325 pF @ 100 V
FET Feature
-
Power Dissipation (Max)
104W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-251
Package / Case
TO-251-3 Short Leads, IPak, TO-251AA
Other
Price advantage, SIHU5N50D-GE3 is available in stock and can be delivered on the same day
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