IXFZ140N25T Details _IXFZ140N25T Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	GigaMOS™ HiPerFET™
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	250 V
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	17mOhm @ 60A, 10V
Vgs(th) (Max) @ Id	5V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	255 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	19000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	445W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	DE475
Package / Case	DE475

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