RF4L055GNTCR Details _RF4L055GNTCR Related parameters PDF

MOSFETs - Single

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V
Current - Continuous Drain (Id) @ 25°C	5.5A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Rds On (Max) @ Id, Vgs	43mOhm @ 5.5A, 10V
Vgs(th) (Max) @ Id	2.7V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	7.8 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	400 pF @ 30 V
FET Feature	-
Power Dissipation (Max)	2W (Ta)
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	HUML2020L8
Package / Case	8-PowerUDFN

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