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IXTA3N100D2 Picture

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IXTA3N100D2

  • IXYS
  • New
  • MOSFET N-CH 1000V 3A TO263
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In Stock:9,038(Ref. price)
Qty.Unit PriceExt. Price
1
$4.54410
$4.54410
Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
1000 V
Current - Continuous Drain (Id) @ 25°C
3A (Tc)
Drive Voltage (Max Rds On, Min Rds On)
-
Rds On (Max) @ Id, Vgs
5.5Ohm @ 1.5A, 0V
Vgs(th) (Max) @ Id
-
Gate Charge (Qg) (Max) @ Vgs
37.5 nC @ 5 V
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
1020 pF @ 25 V
FET Feature
Depletion Mode
Power Dissipation (Max)
125W (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Supplier Device Package
TO-263 (IXTA)
Package / Case
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Other
Price advantage, IXTA3N100D2 is available in stock and can be delivered on the same day
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