TPH3207WS Details _TPH3207WS Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：3,913(Ref. price)

Qty.	Unit Price	Ext. Price
1	$31.87200	$31.87200

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	650 V
Current - Continuous Drain (Id) @ 25°C	50A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	41mOhm @ 32A, 8V
Vgs(th) (Max) @ Id	2.65V @ 700µA
Gate Charge (Qg) (Max) @ Vgs	42 nC @ 8 V
Vgs (Max)	±18V
Input Capacitance (Ciss) (Max) @ Vds	2197 pF @ 400 V
FET Feature	-
Power Dissipation (Max)	178W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Through Hole
Supplier Device Package	TO-247-3
Package / Case	TO-247-3

Other

Price advantage, TPH3207WS is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
IRFS540A	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 17A TO220F	No price	In Stock:20090
TN0110N3-G	Microchip Technology	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 350MA TO92-3	$0.96040	In Stock:3624
IRFS23N15DTRLP	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 150V 23A D2PAK	No price	In Stock:20094
FQPF4N90CT	ON Semiconductor	MOSFETs - Single	Datasheet	POWER FIELD-EFFECT TRANSISTOR, N	$0.75050	In Stock:23216
STL90N6F7	STMicroelectronics	MOSFETs - Single	Datasheet	MOSFET N-CH 60V 90A POWERFLAT	$1.48960	In Stock:20102