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2N7000RLRMG Picture

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2N7000RLRMG

  • ON Semiconductor
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  • MOSFET N-CH 60V 200MA TO92-3
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In Stock:20,754(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Box (TB)
FET Type
N-Channel
Technology
MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)
60 V
Current - Continuous Drain (Id) @ 25°C
200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)
4.5V, 10V
Rds On (Max) @ Id, Vgs
5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id
3V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Vgs (Max)
±20V
Input Capacitance (Ciss) (Max) @ Vds
60 pF @ 25 V
FET Feature
-
Power Dissipation (Max)
350mW (Tc)
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Supplier Device Package
TO-92-3
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Other
Price advantage, 2N7000RLRMG is available in stock and can be delivered on the same day
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