| Description | Details |
|
Series
|
Automotive, AEC-Q101, TrenchMOS™
|
|
Package
|
Tube
|
|
FET Type
|
N-Channel
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
Drain to Source Voltage (Vdss)
|
55 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
120A (Tc)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
3.2mOhm @ 25A, 10V
|
|
Vgs(th) (Max) @ Id
|
2.8V @ 1mA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
258 nC @ 10 V
|
|
Vgs (Max)
|
±16V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
15.3 pF @ 25 V
|
|
FET Feature
|
-
|
|
Power Dissipation (Max)
|
306W (Tc)
|
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
|
Mounting Type
|
Through Hole
|
|
Supplier Device Package
|
I2PAK
|
|
Package / Case
|
TO-262-3 Long Leads, I²Pak, TO-262AA
|