AOV11S60 Details _AOV11S60 Related parameters PDF_Alpha & Omega Semiconductor Inc.-IC-STK

MOSFETs - Single

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Specifications

Description	Details
Series	aMOS™
Package	Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	600 V
Current - Continuous Drain (Id) @ 25°C	650mA (Ta), 8A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	500mOhm @ 3.8A, 10V
Vgs(th) (Max) @ Id	4.1V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	11 nC @ 10 V
Vgs (Max)	±30V
Input Capacitance (Ciss) (Max) @ Vds	545 pF @ 100 V
FET Feature	-
Power Dissipation (Max)	8.3W (Ta), 156W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Supplier Device Package	4-DFN-EP (8x8)
Package / Case	4-PowerTSFN

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