IXUN280N10 Details _IXUN280N10 Related parameters PDF

MOSFETs - Single

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：18,680(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tube
FET Type	N-Channel
Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V
Current - Continuous Drain (Id) @ 25°C	280A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	10V
Rds On (Max) @ Id, Vgs	5mOhm @ 140A, 10V
Vgs(th) (Max) @ Id	4V @ 4mA
Gate Charge (Qg) (Max) @ Vgs	440 nC @ 10 V
Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	18000 pF @ 25 V
FET Feature	-
Power Dissipation (Max)	770W (Tc)
Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Chassis Mount
Supplier Device Package	SOT-227B
Package / Case	SOT-227-4, miniBLOC

Other

Price advantage, IXUN280N10 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
BSP300 E6327	Infineon Technologies	MOSFETs - Single	Datasheet	MOSFET N-CH 800V 190MA SOT223-4	No price	In Stock:19124
NVD6416ANLT4G-001-VF01	ON Semiconductor	MOSFETs - Single	Datasheet	MOSFET N-CH 100V 19A DPAK	No price	In Stock:19126
2SK1421	ON Semiconductor	MOSFETs - Single	Datasheet	N-CHANNEL POWER MOSFET	$1.65120	In Stock:5136
FQB4N80TM	Fairchild Semiconductor	MOSFETs - Single	Datasheet	POWER FIELD-EFFECT TRANSISTOR, 3	$0.67450	In Stock:4650
STI30NM60N	STMicroelectronics	MOSFETs - Single	Datasheet	MOSFET N-CH 600V 25A I2PAK	No price	In Stock:19132