| Description | Details |
|
Series
|
GigaMOS™, HiPerFET™, TrenchT2™
|
|
Package
|
Tube
|
|
FET Type
|
N-Channel
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
Drain to Source Voltage (Vdss)
|
100 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
130A (Tc)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
10V
|
|
Rds On (Max) @ Id, Vgs
|
9.1mOhm @ 65A, 10V
|
|
Vgs(th) (Max) @ Id
|
4.5V @ 1mA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
130 nC @ 10 V
|
|
Vgs (Max)
|
±20V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
6600 pF @ 25 V
|
|
FET Feature
|
-
|
|
Power Dissipation (Max)
|
360W (Tc)
|
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
|
Mounting Type
|
Surface Mount
|
|
Supplier Device Package
|
TO-263 (IXFA)
|
|
Package / Case
|
TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
|