| Description | Details |
|
Series
|
Automotive, AEC-Q101, HEXFET®
|
|
Package
|
Bulk
|
|
FET Type
|
N-Channel
|
|
Technology
|
MOSFET (Metal Oxide)
|
|
Drain to Source Voltage (Vdss)
|
100 V
|
|
Current - Continuous Drain (Id) @ 25°C
|
190A (Tc)
|
|
Drive Voltage (Max Rds On, Min Rds On)
|
4.5V, 10V
|
|
Rds On (Max) @ Id, Vgs
|
3.9mOhm @ 110A, 10V
|
|
Vgs(th) (Max) @ Id
|
2.5V @ 250µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
140 nC @ 4.5 V
|
|
Vgs (Max)
|
±16V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
11.49 pF @ 50 V
|
|
FET Feature
|
-
|
|
Power Dissipation (Max)
|
370W (Tc)
|
|
Operating Temperature
|
-55°C ~ 175°C (TJ)
|
|
Mounting Type
|
Surface Mount
|
|
Supplier Device Package
|
D2PAK (7-Lead)
|
|
Package / Case
|
TO-263-7, D²Pak (6 Leads + Tab)
|