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VWM200-01P Picture

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VWM200-01P

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  • MOSFET 6N-CH 100V 210A V2
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In Stock:17,496(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
6 N-Channel (3-Phase Bridge)
FET Feature
Standard
Drain to Source Voltage (Vdss)
100V
Current - Continuous Drain (Id) @ 25°C
210A
Rds On (Max) @ Id, Vgs
5.2mOhm @ 100A, 10V
Vgs(th) (Max) @ Id
4V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
430nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds
-
Power - Max
-
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Through Hole
Package / Case
V2-PAK
Supplier Device Package
V2-PAK
Other
Price advantage, VWM200-01P is available in stock and can be delivered on the same day
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