HAT1126RWS-E Details _HAT1126RWS-E Related parameters PDF_Renesas Electronics America Inc-IC-STK

MOSFETs - Arrays

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)
FET Type	2 P-Channel (Dual)
FET Feature	Logic Level Gate, 4.5V Drive
Drain to Source Voltage (Vdss)	60V
Current - Continuous Drain (Id) @ 25°C	6A (Ta)
Rds On (Max) @ Id, Vgs	50mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs	37nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	2300pF @ 10V
Power - Max	3W (Ta)
Operating Temperature	150°C
Mounting Type	Surface Mount
Package / Case	8-SOIC (0.154", 3.90mm Width)
Supplier Device Package	8-SOP

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