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EPC2101ENGRT Picture

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EPC2101ENGRT

  • EPC
  • New
  • GAN TRANS ASYMMETRICAL HALF BRID
  • Datasheet download
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In Stock:19,898(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
*
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
2 N-Channel (Half Bridge)
FET Feature
GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)
60V
Current - Continuous Drain (Id) @ 25°C
9.5A, 38A
Rds On (Max) @ Id, Vgs
11.5mOhm @ 20A, 5V
Vgs(th) (Max) @ Id
2.5V @ 2mA
Gate Charge (Qg) (Max) @ Vgs
2.7nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
300pF @ 30V
Power - Max
-
Operating Temperature
-40°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
Die
Supplier Device Package
Die
Other
Price advantage, EPC2101ENGRT is available in stock and can be delivered on the same day
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