QJD1210010 Details _QJD1210010 Related parameters PDF

MOSFETs - Arrays

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,290(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	100A (Tc)
Rds On (Max) @ Id, Vgs	25mOhm @ 100A, 20V
Vgs(th) (Max) @ Id	5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs	500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds	10200pF @ 800V
Power - Max	1080W
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

Other

Price advantage, QJD1210010 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
NTUD3171PZT5G	ON Semiconductor	MOSFETs - Arrays	Datasheet	MOSFET 2P-CH 20V 0.2A SOT-963	No price	In Stock:17382
MHT1000HR5178	NXP USA Inc.	MOSFETs - Arrays	Datasheet	N CHANNEL ENHANCEMENT-MODE RF PO	$131.75550	In Stock:553
FDS6900AS	ON Semiconductor	MOSFETs - Arrays	Datasheet	MOSFET 2N-CH 30V 6.9A/8.2A 8SOIC	No price	In Stock:17386
FDMS3622S	Fairchild Semiconductor	MOSFETs - Arrays	Datasheet	SMALL SIGNAL FIELD-EFFECT TRANSI	$0.68870	In Stock:42508
APTM20TDUM16PG	Microsemi Corporation	MOSFETs - Arrays	Datasheet	MOSFET 6N-CH 200V 104A SP6-P	No price	In Stock:17390