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QJD1210010 Picture

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QJD1210010

  • Powerex Inc.
  • New
  • MOSFET 2N-CH 1200V 100A SIC
  • Datasheet download
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In Stock:19,290(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
2 N-Channel (Dual)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
100A (Tc)
Rds On (Max) @ Id, Vgs
25mOhm @ 100A, 20V
Vgs(th) (Max) @ Id
5V @ 10mA
Gate Charge (Qg) (Max) @ Vgs
500nC @ 20V
Input Capacitance (Ciss) (Max) @ Vds
10200pF @ 800V
Power - Max
1080W
Operating Temperature
-40°C ~ 175°C (TJ)
Mounting Type
Chassis Mount
Package / Case
Module
Supplier Device Package
Module
Other
Price advantage, QJD1210010 is available in stock and can be delivered on the same day
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