IRF5851 Details _IRF5851 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	HEXFET®
Package	Tube
FET Type	N and P-Channel
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25°C	2.7A, 2.2A
Rds On (Max) @ Id, Vgs	90mOhm @ 2.7A, 4.5V
Vgs(th) (Max) @ Id	1.25V @ 250µA
Gate Charge (Qg) (Max) @ Vgs	6nC @ 4.5V
Input Capacitance (Ciss) (Max) @ Vds	400pF @ 15V
Power - Max	960mW
Operating Temperature	-
Mounting Type	Surface Mount
Package / Case	SOT-23-6 Thin, TSOT-23-6
Supplier Device Package	6-TSOP

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