| Description | Details |
|
Series
|
HEXFET®
|
|
Package
|
Bulk
|
|
FET Type
|
2 N-Channel (Dual)
|
|
FET Feature
|
Standard
|
|
Drain to Source Voltage (Vdss)
|
25V
|
|
Current - Continuous Drain (Id) @ 25°C
|
86A (Tc), 303A (Tc)
|
|
Rds On (Max) @ Id, Vgs
|
2.75mOhm @ 27A, 10V, 900µOhm @ 27A, 10V
|
|
Vgs(th) (Max) @ Id
|
2.1V @ 35µA, 2.1V @ 100µA
|
|
Gate Charge (Qg) (Max) @ Vgs
|
20nC, 53nC @ 4.5V
|
|
Input Capacitance (Ciss) (Max) @ Vds
|
1735pF @ 13V, 4765pF @ 13V
|
|
Power - Max
|
156W (Tc)
|
|
Operating Temperature
|
-55°C ~ 150°C (TJ)
|
|
Mounting Type
|
Surface Mount
|
|
Package / Case
|
32-PowerVFQFN
|
|
Supplier Device Package
|
32-PQFN (6x6)
|