CAS480M12HM3 Details _CAS480M12HM3 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101
Package	Box
FET Type	2 N-Channel (Half Bridge)
FET Feature	Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)	1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C	640A (Tc)
Rds On (Max) @ Id, Vgs	2.97mOhm @ 480A, 15V
Vgs(th) (Max) @ Id	3.6V @ 160mA
Gate Charge (Qg) (Max) @ Vgs	15V
Input Capacitance (Ciss) (Max) @ Vds	800V
Power - Max	-
Operating Temperature	-40°C ~ 175°C (TJ)
Mounting Type	Chassis Mount
Package / Case	Module
Supplier Device Package	Module

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