IPG20N04S4L08AATMA1 Details _IPG20N04S4L08AATMA1 Related parameters PDF

MOSFETs - Arrays

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Specifications

Description	Details
Series	Automotive, AEC-Q101, OptiMOS™
Package	Bulk
FET Type	2 N-Channel (Dual)
FET Feature	Logic Level Gate
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25°C	20A
Rds On (Max) @ Id, Vgs	8.2mOhm @ 17A, 10V
Vgs(th) (Max) @ Id	2.2V @ 22µA
Gate Charge (Qg) (Max) @ Vgs	39nC @ 10V
Input Capacitance (Ciss) (Max) @ Vds	3050pF @ 25V
Power - Max	54W
Operating Temperature	-55°C ~ 175°C (TJ)
Mounting Type	Surface Mount, Wettable Flank
Package / Case	8-PowerVDFN
Supplier Device Package	PG-TDSON-8-10

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