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MOSFETs - Arrays
BSM180D12P3C007 Picture

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BSM180D12P3C007

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In Stock:1,701(Ref. price)
Qty.Unit PriceExt. Price
1
$535.09701
$535.09701
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
FET Type
2 N-Channel (Dual)
FET Feature
Silicon Carbide (SiC)
Drain to Source Voltage (Vdss)
1200V (1.2kV)
Current - Continuous Drain (Id) @ 25°C
180A (Tc)
Rds On (Max) @ Id, Vgs
-
Vgs(th) (Max) @ Id
5.6V @ 50mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
900pF @ 10V
Power - Max
880W
Operating Temperature
175°C (TJ)
Mounting Type
Surface Mount
Package / Case
Module
Supplier Device Package
Module
Other
Price advantage, BSM180D12P3C007 is available in stock and can be delivered on the same day
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