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VQ1001P-2 Picture

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VQ1001P-2

  • Vishay Siliconix
  • New
  • MOSFET 4N-CH 30V 0.83A 14DIP
  • Datasheet download
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In Stock:18,300(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tube
FET Type
4 N-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
830mA
Rds On (Max) @ Id, Vgs
1.75Ohm @ 200mA, 5V
Vgs(th) (Max) @ Id
2.5V @ 1mA
Gate Charge (Qg) (Max) @ Vgs
-
Input Capacitance (Ciss) (Max) @ Vds
110pF @ 15V
Power - Max
2W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Through Hole
Package / Case
-
Supplier Device Package
14-DIP
Other
Price advantage, VQ1001P-2 is available in stock and can be delivered on the same day
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