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SI5511DC-T1-E3 Picture

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SI5511DC-T1-E3

  • Vishay Siliconix
  • New
  • MOSFET N/P-CH 30V 4A 1206-8
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In Stock:18,100(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
TrenchFET®
Package
Tape & Reel (TR)Cut Tape (CT)Digi-Reel®
FET Type
N and P-Channel
FET Feature
Logic Level Gate
Drain to Source Voltage (Vdss)
30V
Current - Continuous Drain (Id) @ 25°C
4A, 3.6A
Rds On (Max) @ Id, Vgs
55mOhm @ 4.8A, 4.5V
Vgs(th) (Max) @ Id
2V @ 250µA
Gate Charge (Qg) (Max) @ Vgs
7.1nC @ 5V
Input Capacitance (Ciss) (Max) @ Vds
435pF @ 15V
Power - Max
3.1W, 2.6W
Operating Temperature
-55°C ~ 150°C (TJ)
Mounting Type
Surface Mount
Package / Case
8-SMD, Flat Lead
Supplier Device Package
1206-8 ChipFET™
Other
Price advantage, SI5511DC-T1-E3 is available in stock and can be delivered on the same day
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