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Transistors - Bipolar - Pre-Biased
PDTA113EM,315 Picture

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PDTA113EM,315

  • NXP USA Inc.
  • New
  • NOW NEXPERIA PDTA113EM - SMALL S
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In Stock:140,740(Ref. price)
Qty.Unit PriceExt. Price
1
$0.01940
$0.01940
Documents
Specifications
DescriptionDetails
Series
-
Package
Bulk
Transistor Type
PNP - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
50 V
Resistor - Base (R1)
1 kOhms
Resistor - Emitter Base (R2)
1 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce
30 @ 40mA, 5V
Vce Saturation (Max) @ Ib, Ic
150mV @ 1.5mA, 30mA
Current - Collector Cutoff (Max)
1µA
Frequency - Transition
-
Power - Max
250 mW
Mounting Type
Surface Mount
Package / Case
SC-101, SOT-883
Supplier Device Package
DFN1006-3
Other
Price advantage, PDTA113EM,315 is available in stock and can be delivered on the same day
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