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Transistors - Bipolar - Pre-Biased
FJN3310RTA Picture

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FJN3310RTA

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In Stock:20,012(Ref. price)
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Documents
Specifications
DescriptionDetails
Series
-
Package
Tape & Box (TB)
Transistor Type
NPN - Pre-Biased
Current - Collector (Ic) (Max)
100 mA
Voltage - Collector Emitter Breakdown (Max)
40 V
Resistor - Base (R1)
10 kOhms
Resistor - Emitter Base (R2)
-
DC Current Gain (hFE) (Min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (Max) @ Ib, Ic
300mV @ 1mA, 10mA
Current - Collector Cutoff (Max)
100nA (ICBO)
Frequency - Transition
250 MHz
Power - Max
300 mW
Mounting Type
Through Hole
Package / Case
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
Supplier Device Package
TO-92-3
Other
Price advantage, FJN3310RTA is available in stock and can be delivered on the same day
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