FJN3306RBU Details _FJN3306RBU Related parameters PDF

Transistors - Bipolar - Pre-Biased

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：19,670(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN - Pre-Biased
Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	50 V
Resistor - Base (R1)	10 kOhms
Resistor - Emitter Base (R2)	47 kOhms
DC Current Gain (hFE) (Min) @ Ic, Vce	68 @ 5mA, 5V
Vce Saturation (Max) @ Ib, Ic	300mV @ 500µA, 10mA
Current - Collector Cutoff (Max)	100nA (ICBO)
Frequency - Transition	250 MHz
Power - Max	300 mW
Mounting Type	Through Hole
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Supplier Device Package	TO-92-3

Other

Price advantage, FJN3306RBU is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
DDTC123TE-7-F	Diodes Incorporated	Transistors - Bipolar - Pre-Biased	Datasheet	TRANS PREBIAS NPN 150MW SOT523	No price	In Stock:4683
RN1113ACT(TPL3)	Toshiba Semiconductor and Storage	Transistors - Bipolar - Pre-Biased	Datasheet	TRANS PREBIAS NPN 50V 0.08A CST3	$0.31350	In Stock:10820
PDTD113EUF	Nexperia USA Inc.	Transistors - Bipolar - Pre-Biased	Datasheet	TRANS PREBIAS NPN 50V SOT323	$0.04115	In Stock:17712
DDTC142JE-7	Diodes Incorporated	Transistors - Bipolar - Pre-Biased	Datasheet	TRANS PREBIAS NPN 150MW SOT523	$0.35150	In Stock:1060
RN2308,LF	Toshiba Semiconductor and Storage	Transistors - Bipolar - Pre-Biased	Datasheet	TRANS PREBIAS PNP 50V 0.1A USM	$0.17460	In Stock:3736