Description | Details |
Series
|
-
|
Package
|
Bulk
|
Transistor Type
|
NPN - Pre-Biased
|
Current - Collector (Ic) (Max)
|
100 mA
|
Voltage - Collector Emitter Breakdown (Max)
|
50 V
|
Resistor - Base (R1)
|
22 kOhms
|
Resistor - Emitter Base (R2)
|
22 kOhms
|
DC Current Gain (hFE) (Min) @ Ic, Vce
|
56 @ 5mA, 5V
|
Vce Saturation (Max) @ Ib, Ic
|
300mV @ 500µA, 10mA
|
Current - Collector Cutoff (Max)
|
100nA (ICBO)
|
Frequency - Transition
|
250 MHz
|
Power - Max
|
300 mW
|
Mounting Type
|
Through Hole
|
Package / Case
|
TO-226-3, TO-92-3 (TO-226AA) (Formed Leads)
|
Supplier Device Package
|
TO-92-3
|