NTE59 Details _NTE59 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bag
Transistor Type	PNP
Current - Collector (Ic) (Max)	17 A
Voltage - Collector Emitter Breakdown (Max)	200 V
Vce Saturation (Max) @ Ib, Ic	2.5V @ 1A, 10A
Current - Collector Cutoff (Max)	100µA (ICBO)
DC Current Gain (hFE) (Min) @ Ic, Vce	20 @ 8A, 4V
Power - Max	200 W
Frequency - Transition	20MHz
Operating Temperature	150°C (TJ)
Mounting Type	Through Hole
Package / Case	3-SIP
Supplier Device Package	3-SIP

Other

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