PBSS4220V,115 Details _PBSS4220V,115 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Current - Collector (Ic) (Max)	2 A
Voltage - Collector Emitter Breakdown (Max)	20 V
Vce Saturation (Max) @ Ib, Ic	350mV @ 200mA, 2A
Current - Collector Cutoff (Max)	100nA
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 1A, 2V
Power - Max	900 mW
Frequency - Transition	210MHz
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-563, SOT-666
Supplier Device Package	SOT-666

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