6585_2N4209 Details _6585_2N4209 Related parameters PDF

Transistors - Bipolar - Single

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	PNP
Current - Collector (Ic) (Max)	50 mA
Voltage - Collector Emitter Breakdown (Max)	15 V
Vce Saturation (Max) @ Ib, Ic	800mV @ 100µA, 1mA
Current - Collector Cutoff (Max)	10nA
DC Current Gain (hFE) (Min) @ Ic, Vce	35 @ 1mA, 5V
Power - Max	300 mW
Frequency - Transition	850MHz
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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