NE856M02-AZ Details _NE856M02-AZ Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	6.5GHz
Noise Figure (dB Typ @ f)	1.1dB @ 1GHz
Gain	12dB
Power - Max	1.2W
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 10V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-243AA
Supplier Device Package	SOT-89

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