AT-41535G Details _AT-41535G Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	8GHz
Noise Figure (dB Typ @ f)	1.3dB ~ 3dB @ 1GHz ~ 4GHz
Gain	10dB ~ 18dB
Power - Max	500mW
DC Current Gain (hFE) (Min) @ Ic, Vce	30 @ 10mA, 8V
Current - Collector (Ic) (Max)	60mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	4-SMD (35 micro-X)
Supplier Device Package	35 micro-X

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