BFR949L3E6327 Details _BFR949L3E6327 Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	10V
Frequency - Transition	9GHz
Noise Figure (dB Typ @ f)	1dB ~ 2.5dB @ 1GHz
Gain	21.5dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 5mA, 6V
Current - Collector (Ic) (Max)	50mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-101, SOT-883
Supplier Device Package	PG-TSLP-3-1

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