NE85633-T1B Details _NE85633-T1B Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tape & Reel (TR)Cut Tape (CT)
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	12V
Frequency - Transition	7GHz
Noise Figure (dB Typ @ f)	1.4dB ~ 2dB @ 1GHz
Gain	9dB
Power - Max	200mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 10V
Current - Collector (Ic) (Max)	100mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	TO-236-3, SC-59, SOT-23-3
Supplier Device Package	SOT-23

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