LPT16ED Details _LPT16ED Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	4V
Frequency - Transition	16GHz
Noise Figure (dB Typ @ f)	-
Gain	5.2dB
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	50 @ 20mA, 2V
Current - Collector (Ic) (Max)	80mA
Operating Temperature	150°C (TJ)
Mounting Type	Surface Mount
Package / Case	Die
Supplier Device Package	Die

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