BGR405H6327XTSA1 Details _BGR405H6327XTSA1 Related parameters PDF

Transistors - Bipolar - RF

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Specifications

Description	Details
Series	-
Package	Bulk
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	5V
Frequency - Transition	-
Noise Figure (dB Typ @ f)	1dB ~ 1.6dB @ 400MHz ~ 1.8GHz
Gain	-
Power - Max	50mW
DC Current Gain (hFE) (Min) @ Ic, Vce	-
Current - Collector (Ic) (Max)	12mA
Operating Temperature	-65°C ~ 150°C (TJ)
Mounting Type	Surface Mount
Package / Case	SC-82A, SOT-343
Supplier Device Package	PG-SOT343-4

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