BLW96/01,112 Details _BLW96/01,112 Related parameters PDF

Transistors - Bipolar - RF

The picture is for reference only

Please fill in the inquiry information for purchasing and consulting products

PartName*	Quantity*	Batch Number	Package	Manufacturer	Other requirements

Please fill in the contact details and reply to you in 3 minutes

In Stock：17,048(Ref. price)

Qty.	Unit Price	Ext. Price
No price, please contact inquiry

Qty：

Add inquiry Quick quote

Related products

Documents

Specifications

Description	Details
Series	-
Package	Tray
Transistor Type	NPN
Voltage - Collector Emitter Breakdown (Max)	55V
Frequency - Transition	235MHz
Noise Figure (dB Typ @ f)	-
Gain	-
Power - Max	340W
DC Current Gain (hFE) (Min) @ Ic, Vce	15 @ 7A, 5V
Current - Collector (Ic) (Max)	12A
Operating Temperature	200°C (TJ)
Mounting Type	Surface Mount
Package / Case	SOT-121B
Supplier Device Package	CRFM4

Other

Price advantage, BLW96/01,112 is available in stock and can be delivered on the same day

Recommended Product

Part No	Manufacturer	Product Category	Datasheet	Description	Reference price	Quantity
MSC1350M	Microsemi Corporation	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 65V 1.15GHZ M218	No price	In Stock:18100
NESG250134-T1-AZ	CEL	Transistors - Bipolar - RF	Datasheet	TRANS NPN 900MHZ SOT-89	No price	In Stock:18104
BFR 181W E6327	Infineon Technologies	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 12V 8GHZ SOT323-3	No price	In Stock:18108
NE68139R-T1-A	CEL	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 10V 9GHZ SOT143R	No price	In Stock:18110
BFU660F,115	NXP USA Inc.	Transistors - Bipolar - RF	Datasheet	RF TRANS NPN 5.5V 21GHZ 4DFP	$0.47040	In Stock:16001