Description | Details |
Series
|
-
|
Package
|
Bulk
|
Diode Type
|
Silicon Carbide Schottky
|
Voltage - DC Reverse (Vr) (Max)
|
650 V
|
Current - Average Rectified (Io)
|
10A
|
Voltage - Forward (Vf) (Max) @ If
|
1.7 V @ 10 A
|
Speed
|
No Recovery Time > 500mA (Io)
|
Reverse Recovery Time (trr)
|
0 ns
|
Current - Reverse Leakage @ Vr
|
250 µA @ 650 V
|
Capacitance @ Vr, F
|
300pF @ 1V, 1MHz
|
Mounting Type
|
Through Hole
|
Package / Case
|
TO-220-2 Full Pack, Isolated Tab
|
Supplier Device Package
|
TO-220F
|
Operating Temperature - Junction
|
175°C (Max)
|